View SGW10N60_148414.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SGP10N60A, SGB10N60A SGW10N60A
Fast IGBT in NPT-technology
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP10N60A SGB10N60A SGW10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C
1)
VCE 600V
IC 10A
VCE(sat) 2.3V
Tj 150C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510
Symbol VCE IC
Value 600 20 10.6
Unit V A
ICpul s VGE EAS
40 40 20 70 V mJ
tSC Ptot
10 92
s W
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SGP10N60A, SGB10N60A SGW10N60A
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB
1.35 62 40 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2 2.3 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 5
Unit
V
A 40 1500 100 660 75 51 68 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 0 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
2
SGP10N60A, SGB10N60A SGW10N60A
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 , 1) L = 18 0 nH , 1) C = 55 pF Energy losses include "tail" and diode reverse recovery. 28 12 178 24 0.15 0.17 0.320 34 15 214 29 0.173 0.221 0.394 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 1) L = 18 0 nH , 1) C = 55 pF Energy losses include "tail" and diode reverse recovery. 28 12 198 26 0.260 0.280 0.540 34 15 238 32 0.299 0.364 0.663 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02
SGP10N60A, SGB10N60A SGW10N60A
50A T C =80c
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
Ic
t p =5 s
40A 30A 20A 10A T C =110c
Ic
10A
15 s 50 s
1A
2 00 s 1ms DC
0,1A
0A 10Hz
100Hz
1kHz
10kHz 100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
120 W
25A
100 W
20A
Ptot, POWER DISSIPATION
80 W
IC, COLLECTOR CURRENT
15A
60 W
10A
40 W
20 W
5A
0W 25 C
50 C
75 C
10 0C
12 5C
0A 25C
50C
75C
1 0 0 C
1 2 5 C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
35A 30A
35A 30A
IC, COLLECTOR CURRENT
25A V G E= 2 0 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
25A V G E= 2 0 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
35A 30A
3,5V
I C =20A
3,0V
T j=+25C +150C
IC, COLLECTOR CURRENT
25A 20A 15A 10A 5A 0A 0V
2,5V
I C =10A
2,0V
I C =5A
2V
4V
6V
8V
10V
1,5V 0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
t d(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
1 00 n s
t d(o ff)
tf t d(on) tr
10ns 0A
tf t d(o n ) tr
20 40 60 8 0
5A
10A
15A
20A
25A
10 n s 0
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E)
5 ,5 V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5 ,0 V 4 ,5 V 4 ,0 V 3 ,5 V 3 ,0 V 2 ,5 V 2 ,0 V 1 ,5 V 1 ,0 V -5 0 C 0C 5 0 C 1 0 0 C 1 5 0C m in . ty p . m ax.
t d (o ff)
t, SWITCHING TIMES
100ns
t d(o n) tf tr
50C 100C 150C
10ns 0C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
6
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
1,6m J 1,4m J
*) Eon and Ets include losses due to diode recovery. 1,0m J *) Eon and Ets include losses due to diode recovery.
E ts *
E, SWITCHING ENERGY LOSSES
1,2m J 1,0m J 0,8m J
E, SWITCHING ENERGY LOSSES
E ts *
0,8m J
0,6m J
E on *
0,6m J
E off
0,4m J 0,2m J 0,0m J 0A
E off
0,4m J
E on *
5A
10A
15A
20A
25A
0,2m J 0
20
40
60
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E)
0,8mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
10 K/W D=0.5 0.2 10 K/W
-1
0
E, SWITCHING ENERGY LOSSES
0,6mJ
0.1 0.05 0.02
0,4mJ
E ts*
0,2mJ
R,(K/W) 0.4287 0.4830 0.4383
R1
, (s) 0.0358 4.3*10-3 3.46*10-4
R2
10 K/W
-2
0.01
E off E on*
C 1 = 1 / R 1 C 2 = 2 /R 2
single pulse 10 K/W 1s
-3
0,0mJ 0C
50C
100C
150C
10s
100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
25V
1nF C iss
20V
VGE, GATE-EMITTER VOLTAGE
15V
120V 480V
C, CAPACITANCE
100pF C oss C rss
10V
5V
0V 0nC
25nC
50nC
75nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
200A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
150A
15 s
100A
10 s
50A
5 s
0 s 10V
11V
12V
13V
14V
15V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
TO-220AB
symbol dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 10.80 1.15 6.23 4.60 9.40 16.15 min
[inch] max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40
0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157
2.54 typ. 5.08 typ.
0.1 typ. 0.2 typ.
15 typ.
0.5906 typ.
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
9
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
TO-247AC
symbol dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Q
10
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =55pF.
11
Jul-02
SGP10N60A, SGB10N60A SGW10N60A
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12
Jul-02

▲Up To Search▲

Price & Availability of SGW10N60

	To Download SGW10N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .